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SUM110N05-06L
Vishay Siliconix
N-Channel 55-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( Ω )
0.006 at V GS = 10 V
55
0.0085 at V GS = 4.5 V
I D (A)
110
92
Q g (Typ)
65
FEATURES
? TrenchFET ? Power MOSFET
? 175 °C Junction Temperature
? Low Thermal Resistance Package
A v aila b le
RoHS*
COMPLIANT
APPLICATIONS
? Industrial
D
TO-263
G
G
D S
Top View
Ordering Information: SUM110N05-06L
SUM110N05-06L-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
55
± 20
Unit
V
158
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C c
I D
I DM
I AR
E AR
P D
T J , T stg
110
63
240
60
180
b
3.7
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount c
R thJA
R thJC
40
0.95
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72005
S-80108-Rev. C, 21-Jan-08
www.vishay.com
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